| PART |
Description |
Maker |
| S6301 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6304 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| S4108 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| NEZ1011-2E NEZ1414-2E |
2W X, Ku-BAND POWER GaAs MESFET 2W的第十个Ku波段功率GaAs MESFET
2W X / Ku-BAND POWER GaAs MESFET
2W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| S6202 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| APT2X21DC60J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| NE960R27501 NE960R275 |
0.2W X, Ku-BAND POWER GaAs MESFET
|
NEC[NEC]
|
| NEZ1011-4E NEZ1414-4E |
4W X, Ku-BAND POWER GaAs MESFET
|
NEC
|
| NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
|
